Prof. Chao Liu received the Ph.d Degree in electrical and computer engineering from Hong Kong University of Science and Technology (HKUST) in 2016. From 2016 to 2019, he worked in Institute of Electrical Engineering, Ecole Polytechnique Federale de Lausanne (EPFL), Switzerland as a Collaborator Scientist/post-doc. He is currently a professor in the school of microelectronics, Shandong University, China from April 2019. His research interest is at the intersection of wide-bandgap semiconductors, power electronic devices, optoelectronic devices, and their monolithic integration. At EPFL, he worked on III-Nitride Nanostructures for Energy-Efficient Devices supported by the European Horizon 2020 program. He reported the world's first GaN-on-Si vertical transistor and developed GaN-on-Si vertical Schottky barrier diode with the highest breakdown voltage and the smallest turn-on voltage. He unveiled the possibility of integrating a vertical freewheeling Schottky barrier diode into the vertical GaN transistor. In his Ph.D. dissertation, Monolithic integration of III-nitride devices by selective epitaxial growth, he designed and fabricated a micro-electro-optical transceiver system with bi-directional optical communication functionality. This is the first time a monolithically integrated transceiver system with superior performance has been demonstrated, bringing the great potential to a variety of applications, such as visible light communication with efficient voltage-controlled drivers and optoisolator for integrated GaN power ICs. His early research topic is related to the droop problem in blue LEDs, a long-standing impediment for the development of energy-efficient GaN LEDs. Additionally, he conducted a study of semi-polar GaN nanostructures on low-cost silicon substrates, which can potentially be utilized as a platform for a variety of high-end optoelectronic and electronic devices. He has co-authored over 60 papers in top-notch international journals and conferences (including APL, OL, OE, IEEE EDL, IEEE PTL, IEEE TED, ISPSD, etc), among which one paper was picked by the editor as influential papers in APL, one paper was selected as cover paper in IEEE EDL, and one paper has been the top 5 most popular papers in IEEE EDL since Jun. 2018. His research works have been cited over 800 times by renowned scholars and world-leading semiconductor companies as well as featured in industry magazines Compound Semiconductor, Semiconductor Today, and IEEE Spectrum. He serves as a reviewer for over 10 international journals and was selected as an outstanding reviewer by JCG in 2018.