Seiichi Miyazaki received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hiroshima University, Higashi-Hiroshima, Japan, in 1981, 1983, and 1986, respectively.,From 1986 to 1992, he was a Research Associate at Department of Electrical Engineering, Hiroshima University. From April 1994 to February 1995, he was a Visiting Researcher at Department of Physics, Universitaet Erlangen-Nuernberg, Germany. He is currently an Associate Professor at Hiroshima University, and has been engaged in research on silicon-based devices, process technologies and characterization of Si surfaces, ultrathin dielectrics and dielectric/Si interfaces.,Dr. Miyazaki is a member of the Japan Society of Applied Physics, the Institute of Electronics, Information and Communication Engineers, and the Materials Research Society.