Seiichi Miyazaki received the B.S. (1981), M.S. (1983), and Ph.D. (1986) in electronic engineering from Hiroshima University. From 1986 to 1992, he was as a Research Associate at Department of Electrical Engineering in Hiroshima University, and from 1992 to 2001 as an Associate Professor. From April 1994 to February 1995, he worked as a visiting researcher at Department of Physics in UniversitÃ¤t Erlangen-NÃ¼rnberg in Germany. From 2001, he was an Associate Professor at Graduate School of Advanced Sciences of Matter in Hiroshima University and promoted to professor in April 2002. Since June 2010, he has moved from Hiroshima University to Nagoya University as a professor of Graduate School of Engineering in Nagoya University, and served as a vice dean of Graduate School of Engineering in 2017 and 2018. Now, he has served as the director of Synchrotron Radiation Research Center, Nagoya University since 2019. He has been engaged in research on silicon-based devices, process technologies and characterization of Si surfaces, ultrathin gate dielectrics and gate stack interfaces. His current interests and activities cover formation of Si-based semiconducting and metallic nanodots, hybrid stacked structures of nanodots and their floating gate application for Si-based functional memories, and also extend to surface cleaning and gate dielectric technologies for GaN power devices, and he has published over 250 peer reviewed journal papers and conference proceedings. Dr. Miyazaki is a member of the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communication Engineering (IEICE), the Japan Society of Vacuum and Surface Science (JVSS), the Materials Research Society of Japan (MRS-J), Electrochemical Society (ECS) and Materials Research Society (MRS). He was elected a Fellow of the JSAP in 2009 for contribution in the field of material science and processing technologies for Si-based devices. He served as a director of JSAP in 2011, 2012, 2015 and 2016, and he chaired the 154th committee on â€œSemiconductor Interfaces and Their Applicationâ€, Japan Society for the Promotion of Science (JSPS) from 2013 to 2020. He was the chair of the organizing committee of 7th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII, June 7-11, 2016, Nagoya), a vice-chair of the organizing committee of 10th Anniversary International Symposium Advance Plasma Science and its Applications for Nitrides and Nanomaterials and 11th International Conference on Plasma-Nanotechnology & Science (ISPlasma 2018/IC-PLANTS 2018, March 4-8, 2018, Nagoya), the general chair of 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14, Oct. 21-25, 2018, Sendai), and the organizing committee chairs of ISPlasma 2019/IC-PLANTS 2019 (March 17-21, 2019, Nagoya) and ISCSI-VIII (Nov. 27-30, 2019, Sendai).