Mohamed Henini obtained his first degree at the University of Oran, Algeria. He went to Nottingham University and was awarded the PhD degree in 1984. Mohamed has over 25 years of experience in Molecular Beam Epitaxy (MBE) growth. His particular specialty is the physics and technology of MBE growth for III-V electronic and optoelectronic devices. He has authored and co-authored over 930 papers in international journals and conference proceedings. He has an h-index of 50. He is the founder of two international conferences namely, Low Dimensional Structures and Devices (LDSD) and Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). He edited six books which were published by Elsevier and serves on the Editorial Board of several scientific journals. He is Editor of Journal of Alloys and Compounds (Elsevier).